Philips pbss4032sn free download

File name pbss4032sn.pdf

PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 -- 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP/PNP NPN/PNP NXP Name complement complement PBSS4032SN SOT96-1 SO8 PBSS4032SP PBSS4032SPN 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 30 V IC collector current - - 5.7 A ICM peak collector current single pulse; - - 10 A tp 1 ms RCEsat collector-emitter IC = 4 A; IB = 0.4 A [1] - 45 62.5 m saturation resistance [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitter TR1 8 5 8 7 6 5 2 base TR1 3 emitter