Philips bfs540 free download

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BFS540 NPN 9 GHz wideband transistor Product specification 2000 May 30 Supersedes data of 1997 Dec 05 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 FEATURES DESCRIPTION High power gain NPN transistor in a SOT323 plastic Low noise figure package. handbook, 2 columns 3 High transition frequency Gold metallization ensures PINNING excellent reliability PIN DESCRIPTION SOT323 package. 1 base 1 2 2 emitter Top view MBC870 APPLICATIONS 3 collector RF wideband amplifier applications Marking code: N4. such as satellite TV systems and RF portable communication equipment Fig.1 SOT323. with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC DC collector current 120 mA Ptot total power dissipation Ts 80 C; note 1 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 C 100 120 250 fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; 9 GHz Tamb = 25 C GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 dB Tamb = 25 C F noise figure IC = 10 mA; VCE = 8 V; f = 900 MHz; 1.3 1.7 dB Tamb = 25 C Note 1. Ts is the temperature at th