Supertex tp2104 free download

File name tp2104.pdf

TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description High input impedance and high gain This low threshold enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertex's Ease of paralleling well-proven silicon-gate manufacturing process. This Low CISS and fast switching speeds combination produces a device with the power handling Excellent thermal stability capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent Integral source-drain diode in MOS devices. Characteristic of all MOS structures, Free from secondary breakdown this device is free from thermal runaway and thermally- induced secondary breakdown. Applications Logic level interfaces - ideal for TTL and CMOS Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very Solid state relays low threshold voltage, high breakdown voltage, high input Analog switches impedance, low input capacitance, and fast switching Power management speeds are desired. Telecom switches Ordering Information Package Options RDS(ON) VGS(th) BVDSS/BVDGS Device (max) (max) TO-236AB (SOT-23)