KEC ktb817b free download

File name ktb817b.pdf

SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B. Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V DC IC -12 Collector Current A Pulse ICP -15 Collector Power Dissipation (Tc=25 ) PC 100 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -0.1 mA Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 mA hFE (1) (Note) VCE=-5V, IC=-1A 60 - 200 DC Current Gain hFE 2 VCE=-5V, IC=-6A 20 - Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-1A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A - 15 - MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 300 - pF Turn On Time ton VCC=-20V - 0.25 - Fall Time tf IC=1A=10 IB1=-10 IB2 - 0.53 - S Storage Time tstg RL=20 - 1.61 - Note : hFE(1) Classification O:60 120, Y:100 200 2011. 3. 18 Revision No : 0 1/3