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STB40NF10L N-channel 100V - 0.028 - 40A - D2PAK Low gate charge STripFETTM II Power MOSFET General features Type VDSS RDS(on) ID STB40NF10L 100V <0.033 40A Exceptional dv/dt capability 100% avalanche tested 3 Application oriented characterization 1 D2PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- Internal schematic diagram efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. Applications Switching application Order codes Part number Marking Package Packaging 2PAK STB40NF10L B40NF10L D Tape & reel June 2006 Rev 2 1/13 www.st.com 13 Contents STB40NF10L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB40NF10L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 k) 100 V VGS Gate- source voltage