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STD2NB50 STD2NB50-1 N-CHANNEL 500V - 5 - 1A DPAK / IPAK PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STD2NB50 500V < 6 1A STD2NB50-1 500V < 6 1A s TYPICAL RDS(on) = 5 3 s 100% AVALANCHE TESTED 3 2 1 s VERY LOW INTRINSIC CAPACITANCES 1 s ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL DPAK IPAK DESCRIPTION Using the latest high voltage MESH OVERLAYTM INTERNAL SCHEMATIC DIAGRAM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k) 500 V VGS Gate- source Voltage