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BUT100 HIGH POWER NPN SILICON TRANSISTOR n HIGH EFFICIENCY SWITCHING n VERY LOW SATURATION VOLTAGE n RECTANGULAR SAFE OPERATION AREA n WIDE ACCIDENTAL OVERLOAD AREA DESCRIPTION Suitable for motor drivers, SMPS converters, uninterruptable power supply operating low voltage supply. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 200 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 7 V IE Emitter Current 50 A I EM Emitter Peak Current 150 A IB Base Current 10 A I BM Base Peak Current 30 A o P tot T otal Dissipation at T c < 25 C 300 W o T s tg Storage Temperature -65 to 200 C o Tj Max. O perating Junction Temperature 200 C October 1995 1/4 BUT100 THERMAL DATA o R thj -ca se Thermal Resistance Junction-case Max 0.58 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit I CER Collector Cut-off V CE = V CEV 1 mA Current (R BE = 5) V CE = V CEV T C= 100 o C 5 mA I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA o Current V CE = V CEV V BE = -1.5V TC = 100 C 4 mA I EBO Emitter Cu