Philips pbss5350d free download

File name pbss5350d.pdf

PBSS5350D 57 T4 SO 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 -- 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified voltage VCEsat Smaller Printed-Circuit Board (PCB) High current capability area than for conventional transistors High efficiency due to less heat generation 1.3 Applications Supply line switching circuits DC-to-DC conversion Battery management applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter open base - - -50 V voltage IC collector current - - -3 A ICM peak collector current - - -5 A RCEsat collector-emitter IC = -2 A; IB = -200 mA; pulsed; - 120 150 m saturation resistance tp 300