Philips bfs520 cnv free download

File name bfs520_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 FEATURES It is intended for wideband applications such as satellite TV High power gain tuners, cellular phones, cordless Low noise figure phones, pagers etc., with signal handbook, 2 columns 3 High transition frequency frequencies up to 2 GHz. Gold metallization ensures excellent reliability PINNING SOT323 envelope. PIN DESCRIPTION 1 2 Code: N2 DESCRIPTION Top view MBC870 1 base NPN transistor in a plastic SOT323 2 emitter envelope. Fig.1 SOT323. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCES collector-emitter voltage RBE = 0 15 V IC DC collector current 70 mA Ptot total power dissipation up to Ts = 118 C; note 1 300 mW hFE DC current gain IC = 20 mA; VCE = 6 V; Tj = 25 C 60 120 250 fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; 9 GHz Tamb = 25 C GUM maximum unilateral power gain Ic = 20 mA; VCE = 6 V; f = 900 MHz; 15 dB Tamb = 25 C F noise figure Ic = 5 mA; VCE = 6 V; f = 900 MHz; 1.1 1.6 dB