International Rectifier irg4zh70ud free download

File name irg4zh70ud.pdf

PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH Surface Mountable ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C q UltraFast IGBT optimized for high switching frequencies n-channel q IGBT co-packaged with HEXFREDTM ultrafast, VCES = 1200V ultra-soft recovery antiparallel diodes for use in bridge configurations VCE(ON)typ = 2.23V q Low Gate Charge G q Low profile low inductance SMD-10 Package E(k) @VGE = 15V, IC = 42A q Separated control & Power-connections for E easy paralleling q Inherently good coplanarity q Easy solder inspection and cleaning Benefits q Highest power density and efficiency available q HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics q IGBTs optimized for specific application conditions SMD-10 q High input impedance requires low gate drive power q Less noise and interference Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25