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File name 2N3906 AUDIO AMP, SWITCH.pdf

NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP) Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector­Emitter Breakdown Voltage Collector­Base Breakdown Voltage Emitter­Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 10mA, IB = 0 V(BR)CBO IC = 10µA, IE = 0 V(BR)EBO IE = 10µA, IC = 0 ICBO IEBO VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = +75°C Emitter Cutoff Current 80 80 5 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ 50 5 100 V V V nA µA nA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA VCE = 10V, IC = 500mA Collector­Emitter Saturation Voltage VCE(sat) VBE(sat) VBE(on) fT Cob Cib hie hre hfe hoe NF IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 Base­Emitter Saturation Voltage IC = 150mA, IB = 15mA, Note 2 IC = 500mA, IB = 50mA, Note 2 Base­Emitter ON Voltage Small­Signal Characteristics Current Gain­Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Fe