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DATA SHEET SILICON POWER TRANSISTORS 2SC4331, 2SC4331-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. PACKAGE DRAWING (UNIT: mm) FEATURES · Available for high-current control in small dimension · Z type is a lead-processed product and is deal for mounting a hybrid IC. · Low collector saturation voltage VCE(sat) = 0.3 V MAX. (@IC = 3 A) · Fast switching speed: tf 0.4 µs MAX. (@IC = 3 A) · High DC current gain and excellent linearity ABSOLUTE MAXIMUM RATINGS (TA = 25°C) ° Parameter Collector to base voltage Collector to emitter voltage Base to emitter voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg Ratings 150 100 7.0 5.0 10 2.5 15 1.0**, 2.0*** 150 -55 to +150 Unit V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter 4. Fin (collector) * PW 10 ms, duty cycle 50% ** Printing board mounted 2 *** 7.5 mm Ч 0.7 mm, ceramic board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16136EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4331, 2SC4331-Z ELECTRICAL CHARACTERISTICS (TA = 25°C) ° Parameter Collector to emitter voltage Collector to emitter voltage Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time Fall time Symbol VCEO(SUS) VCEX(SUS) ICBO ICER ICEX1 ICEX2 IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg tf Conditions IC = 2.5 A, IB = 0.25 A, L = 1 mH IC = 2.5 A, IB1 = -IB2 = 0.25 A, VBE(OFF) = -1.5 V, L = 180 µH, clamped VCE = 100 V, IE = 0 VCE = 100 V, RBE = 50 , TA = 125°C VCE = 100 V, VBE(OFF) = -1.5 V VCE = 100 V, VBE(OFF) = -1.5 V, TA = 125°C VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 3.0 A IC = 3.0 A, IB = 0.15 A IC = 4.0 A, IB = 0.2 A IC = 3.0 A, IB = 0.15 A IC = 4.0 A, IB = 0.2 A VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IE = -0.5 A IC = 3.0 A, RL = 17 , IB1 = -IB2 = 0.15 A, VCC 50 V Refer to