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DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. PACKAGE DRAWING (UNIT: mm) FEATURES · High hFE and low VCE(sat): hFE 800 (VCE = 2 V, IC = 5 A) VCE(sat) 0.12 V (IC = 5 A, IB = 0.05 A) · On-chip C to E damper diode · Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 100 7.0 ±15 ±22 4.0 35 2.0 150 -55 to +150 Unit V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter EQUIVALENT CIRCUIT * PW 10 ms, duty cycle 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15600EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4554 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Collector saturation voltage Collector saturation voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time Diode forward voltage Symbol ICBO IEBO hFE1 hFE2 VCE(sat)1 VCE(sat)2 VCE(sat)3 VCE(sat)4 VBE(sat) fT Cob ton tstg tf VDF IDF = 10 A Conditions VCB = 100 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 5.0 A VCE = 2.0 V, IC = 10 A IC = 5.0 A, IB = 100 mA IC = 5.0 A, IB = 50 mA IC = 10 A, IB = 200 mA IC = 10 A, IB = 100 mA IC = 10 A, IB = 100 mA VCE = 5.0 V, IC = 1.0 A VCB = 10 V, IE = 0, f = 1 MHz IC = 8.0 A, RL = 2.0 , IB1 = -IB2 = 80 mA, VCC 16 V Refer to the test circuit. 0.5 1.6 100 210 0.5 2.0 0.12 450 150 0.25 0.3 0.4 0.75 1.2 V V V V V MHz pF 800 MIN. TYP. MAX. 10 17 2,000 Unit µA mA µs µs µs V SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Data Sheet D15600EJ2V0DS 2SC4554 TYPICAL CHARACTERISTICS (Ta = 25°C) ° Total Power Dissipation PT (W) Case Temperature TC (°C) IC Derating dT (%) Case Temperature TC (°C) Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Transient Thermal Resistance r(t) (°C/W) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D15600EJ2V0DS 3 2SC4554 Collector Current IC