Keithley 052207_3WLR free download

File name 052207_3WLR.pdf

A GREAT ER M EA SU R E O F C O N F I D E N C E This situation calls for increased collabo- ration between test instrument vendors and their leading edge reliability customers. Reliability Test Trends Today we are seeing the introduction of new gate dielectrics to address the increas- ing leakages associated with ultra thin gates. With the introduction of unconventional di- electric materials, such as Hafnium oxides, the degradation mechanism known as Bias Temperature Instability (BTI) has become every more problematic. The new materials generally reduce gate leakage, which leads to lower quiescent operating currents, however it also results in threshold and baseband volt- age instability. In addition to BTI, the new generation of New Challenges gate stacks (high-k-metal gates specifically) display time dependent dielectric breakdown (TDDB) characteristics that are distinctly In WLR Testing different from conventional SiO2. Earli