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Search results for: RFISFR01(2.5 -2.686 GHz).pdf (found: 44 regularSearch in boolean mode) ask for a document

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RFISFR01(2.5 -2.686 GHz).pdf : Full Text Matches - Check >>
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RFISFR01(2.5 -2.686 GHz).pdf13-02-2008The RFISFR01 is a RF front-end module that integrates band switching and is a transceiver front end designed for low voltage operation. The module contains wide band power amplifier, low noise amplifiers, band pass, low pass filters.Components56 kB87Rficsolutions.IncRFISFR01The RFISFR01 is a RF front-end module thatjai_kale
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SONY DSC-HX1 SERVICE MANUAL LEVEL 2 VER 1.1 2009.04 REV-1 (9-852-686-32).part3.rar29-07-2009SONY DSC-HX1 DIGITAL STILL CAMERA. SERVICE MANUAL VERSION 1.1 2009.04 REVISION-1 PART#(9-852-686-32)Digital cameras726 kB55SONYDSC-HX19-852-686-32endless
SONY DSC-HX1 SECTION 6 ADJUSTMENTS AUTO-ADJ VER 1.0 2009.03 (9-852-686-51).rar29-07-2009SONY DSC-HX1 DIGITAL STILL CAMERA. SECTION 6 ADJUSTMENTS AUTO-ADJ VERSION 1.0 2009.03 PART#(9-852-686-51)Digital cameras36 kB26SONYDSC-HX19-852-686-51endless
RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf13-02-2008The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciallComponents118 kB70Rficsolutions.IncRGPA05The RGPA05 is a 1.85 to 1.91 GHz high efficiencyjai_kale
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf13-02-2008The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RFComponents104 kB58Rficsolutions.IncRGPA04The RGPA04 is a 4.9 to 5.9 GHz high efficiencyjai_kale
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf13-02-2008The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additiComponents154 kB55Rficsolutions.IncRGPA03The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobjai_kale
RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf13-02-2008The RGPA01 is a 2.4 to 2.5 GHz high efficiency GaAs Enhancement Mode pHEMT MMIC power amplifier. This MMIC power amplifier doesn’t require any off chip components. The device is designed for 802.11b/g and WLAN MIMO system. The Power Amplifier exhibitComponents69 kB57Rficsolutions.IncRGPA01The RGPA01 is a 2.4 to 2.5 GHz high efficiencyjai_kale
RGLNA11(2-6 GHz GaAs pHEMT).pdf13-02-2008The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB aComponents126 kB31Rficsolutions.IncRGLNA11The RGLNA11 is a broadband high efficiency GaAsjai_kale
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf13-02-2008The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. GComponents44 kB114Rficsolutions.IncRGLNA10The RGLNA10 is 7.0-26.0 GHz; Low Noisejai_kale
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13-02-2008The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 iComponents36 kB30Rficsolutions.IncRGLNA09The RGLNA09 is 5.15 to 5.35 GHz high efficiencyjai_kale
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13-02-2008The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area isComponents77 kB27Rficsolutions.IncRGLNA08The RGLNA08 is 2.4 to 2.5 GHz high efficiencyjai_kale
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13-02-2008The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range oComponents54 kB34Rficsolutions.IncRGLNA06The RGLNA06 is a broadband high efficiency GaAsjai_kale
RGLNA03(2-12 GHz GaAs pHEMT).pdf13-02-2008The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No inputComponents114 kB35Rficsolutions.IncRGLNA03The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifierjai_kale
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13-02-2008The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum noComponents59 kB29Rficsolutions.IncRGLNA02The RGLNA02 is 2.0 to 6.0 GHz high efficiencyjai_kale
RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf13-02-2008The RGLNA01 is 0.7 to 3.0 GHz high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier IP Block .The device is designed for use in the IEEE 802.11b/g, PCS, PHS and Cellular system. The die area of RGLNA01 is 0.8 mm x 0.7 mm, with on chip inputComponents65 kB22Rficsolutions.IncRGLNA01The RGLNA01 is 0.7 to 3.0 GHz high efficiencyjai_kale
RGDA01(2-6 GHz GaAs pHEMT).pdf13-02-2008The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement mode psuedomorphic high electron mobility transistor Driver Amplifier. The device is designed for IEEE 802.11a/b/g, WLAN standards and Cellular system. The driver amplifier can provide upto 20 dBm power Components74 kB73Rficsolutions.IncRGDA01The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancementjai_kale
RFISFRT01(2.4-2.5 GHz).pdf13-02-2008The RFISFRT01 is a monolithic integrated transceiver front end suitable for 802.11b/g (2.4 GHz) application. This is the fully integrated Transceiver Chip except passive filters. It contains low noise amplifier, Power amplifier and a switch. The inputComponents133 kB116Rficsolutions.IncRFISFRT01The RFISFRT01 is a monolithic integratedjai_kale
RDA03(2-4 GHz Driver Amp).pdf13-02-2008The RDA03 is a 2.0 to 4.0 GHz, high gain Driver Amplifier. It provides very good gain flatness over the band. It requires +3.3 Volt supply. It has tunability by having some off chip components. It has the option to optimize externally with off chip iComponents128 kB45Rficsolutions.IncRDA03The RDA03 is a 2.0 to 4.0 GHz, high gain Driverjai_kale
RTLNA01.pdf12-02-2008The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP Block .The device is designed for 802.11 b/g and Cellular system. The LNA has input and output matching off-chip which will provide the flexibility to tune the LNA for low noise figure. The LNA is biaComponents61 kB33Rficsolutions Inc.RTLNA01The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IPjai_kale
RTDA01.pdf12-02-2008The RTDA01 is a 2.0 to 5.0 GHz; CMOS driver amplifier. The device is designed for the 802.11 a/b/g WLAN systems. The driver amplifier gives 18 dBm Pout for the frequency range 2.0 to 5.0 GHz. The input and output matching is on chip which reduces theComponents56 kB68Rficsolutions Inc.RTDA01The RTDA01 is a 2.0 to 5.0 GHz; CMOS driverjai_kale

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