| File | Date | Description | Class | Size | Popular | Mfg | Model | Original | Added by |
| RGLNA06(2-6 GHz,3.3 V GaAs pHE : Full Text Matches - Check >> |
| Found in: file name (1) |
| RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf | 13-02-2008 | The RGLNA06 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The MMIC Low Noise Amplifier doesn’t require any
off-chip component. The Broadband LNA is
designed for the 802.11a/b/g/n system.
The LNA covers a wide range o | Components | 54 kB | 34 | Rficsolutions.Inc | RGLNA06 | The RGLNA06 is a broadband high efficiency GaAs | jai_kale |
| Found in: fulltext index (42) |
| RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf | 13-02-2008 | The RGPA05 is a 1.85 to 1.91 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor MMIC power stage. This
power stage can be preceded by a Driver stage to
realize a complete amplifier.
It has been designed speciall | Components | 118 kB | 70 | Rficsolutions.Inc | RGPA05 | The RGPA05 is a 1.85 to 1.91 GHz high efficiency | jai_kale |
| RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGPA04 is a 4.9 to 5.9 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor MMIC power amplifier.
The device is designed for 802.11a WLAN system.
The part is matched at the input and output so no
additional RF | Components | 104 kB | 58 | Rficsolutions.Inc | RGPA04 | The RGPA04 is a 4.9 to 5.9 GHz high efficiency | jai_kale |
| RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems.
The part is matched at the input and output so no additi | Components | 154 kB | 55 | Rficsolutions.Inc | RGPA03 | The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mob | jai_kale |
| RGPA01(2.4-2.5 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGPA01 is a 2.4 to 2.5 GHz high efficiency
GaAs Enhancement Mode pHEMT MMIC power
amplifier. This MMIC power amplifier doesn’t require
any off chip components.
The device is designed for 802.11b/g and WLAN
MIMO system. The Power Amplifier exhibit | Components | 69 kB | 57 | Rficsolutions.Inc | RGPA01 | The RGPA01 is a 2.4 to 2.5 GHz high efficiency | jai_kale |
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| RGLNA11(2-6 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGLNA11 is a broadband high efficiency GaAs
Enhancement mode pHEMT Low Noise Amplifier.
The device is designed for use in the 802.11a/b/g
and WLAN MIMO system.
The LNA covers a wide range of frequency from 2 to
6 GHz. The noise figure is 1.7 dB a | Components | 126 kB | 31 | Rficsolutions.Inc | RGLNA11 | The RGLNA11 is a broadband high efficiency GaAs | jai_kale |
| RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGLNA10 is 7.0-26.0 GHz; Low Noise
Distributed Amplifiers using GaAs pHEMT
Technology. The self-biased amplifier provides 19
dB of gain and 14 dBm of output power at P1 dB
gain compression while requiring only 86 mA from a
single 3.0 V supply.
G | Components | 44 kB | 114 | Rficsolutions.Inc | RGLNA10 | The RGLNA10 is 7.0-26.0 GHz; Low Noise | jai_kale |
| RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13-02-2008 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier .The
device is designed for 802.11a and WLAN MIMO
system.
The noise figure is 1.4 dB at 5.25 GHz. The
RGLNA09 i | Components | 36 kB | 30 | Rficsolutions.Inc | RGLNA09 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency | jai_kale |
| RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11b/g and WLAN MIMO
system.
The noise figure is 1.5 dB at 2.4 GHz and die area
is | Components | 77 kB | 27 | Rficsolutions.Inc | RGLNA08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency | jai_kale |
| RGLNA03(2-12 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard.
The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input | Components | 114 kB | 35 | Rficsolutions.Inc | RGLNA03 | The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier | jai_kale |
| RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13-02-2008 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency
GaAs Enhancement mode psuedomorphic high
electron mobility transistor Low noise amplifier. The
device is designed for 802.11a/b/g and Wi-Fi
systems. It gives Power Output of 5 dBm at P1 dB.
The minimum no | Components | 59 kB | 29 | Rficsolutions.Inc | RGLNA02 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency | jai_kale |
| RGLNA01(0.7-3.0 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGLNA01 is 0.7 to 3.0 GHz high efficiency
GaAs Enhancement mode pHEMT Low Noise
Amplifier IP Block .The device is designed for use in
the IEEE 802.11b/g, PCS, PHS and Cellular system.
The die area of RGLNA01 is 0.8 mm x 0.7 mm, with
on chip input | Components | 65 kB | 22 | Rficsolutions.Inc | RGLNA01 | The RGLNA01 is 0.7 to 3.0 GHz high efficiency | jai_kale |
| RGDA01(2-6 GHz GaAs pHEMT).pdf | 13-02-2008 | The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement
mode psuedomorphic high electron mobility
transistor Driver Amplifier. The device is designed
for IEEE 802.11a/b/g, WLAN standards and Cellular
system.
The driver amplifier can provide upto 20 dBm power
| Components | 74 kB | 73 | Rficsolutions.Inc | RGDA01 | The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement | jai_kale |
| GRVO2.pdf | 11-02-2008 | The GRV02 is 10 to 15 GHz; broadband VCO
designed on 2 um GaAs HBT Technology. The
resonator part is split on-chip inductor and off-chip
Varactor. The VCO consumes only 3.5 mA current
and the layout is very tiny.
The phase noise of the GEV03 can be i | Components | 64 kB | 36 | Rficsolutions Inc. | GRV02 | The GRV02 is 10 to 15 GHz; broadband VCO | jai_kale |
| GEVO3.pdf | 11-02-2008 | The GEV03 is 15 to 20 GHz broadband VCO
designed on 2 um GaAs HBT process. The device is
designed for high frequency applications. The
resonator part is split into on-chip inductor and offchip
varactor. The GEV03 consumes only 3.5 mA
current.
The ph | Components | 44 kB | 40 | Rficsolutions Inc. | GEV03 | The GEV03 is 15 to 20 GHz broadband VCO | jai_kale |
| RTV01(CATV).pdf | 13-02-2008 | The RTV01 is a CATV Line Amplifier IP block.
CATV Line Amplifier designed using GaAs
Enhancement mode psuedomorphic high electron
mobility transistor (pHEMT). The amplifier
provides low distortion and noise figure along with
flat gain. The part is bi | Components | 185 kB | 215 | Rficsolutions.Inc | RTV01 | The RTV01 is a CATV Line Amplifier IP block. | jai_kale |
| RFISFRT01(2.4-2.5 GHz).pdf | 13-02-2008 | The RFISFRT01 is a monolithic integrated
transceiver front end suitable for 802.11b/g (2.4
GHz) application. This is the fully integrated
Transceiver Chip except passive filters.
It contains low noise amplifier, Power amplifier and a switch. The input | Components | 133 kB | 116 | Rficsolutions.Inc | RFISFRT01 | The RFISFRT01 is a monolithic integrated | jai_kale |
| RFISFR01(2.5 -2.686 GHz).pdf | 13-02-2008 | The RFISFR01 is a RF front-end module that
integrates band switching and is a transceiver front
end designed for low voltage operation.
The module contains wide band power amplifier,
low noise amplifiers, band pass, low pass filters. | Components | 56 kB | 87 | Rficsolutions.Inc | RFISFR01 | The RFISFR01 is a RF front-end module that | jai_kale |
| RDA03(2-4 GHz Driver Amp).pdf | 13-02-2008 | The RDA03 is a 2.0 to 4.0 GHz, high gain Driver
Amplifier. It provides very good gain flatness over
the band. It requires +3.3 Volt supply.
It has tunability by having some off chip
components. It has the option to optimize externally
with off chip i | Components | 128 kB | 45 | Rficsolutions.Inc | RDA03 | The RDA03 is a 2.0 to 4.0 GHz, high gain Driver | jai_kale |
| RTLNA01.pdf | 12-02-2008 | The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP
Block .The device is designed for 802.11 b/g and
Cellular system. The LNA has input and output
matching off-chip which will provide the flexibility to
tune the LNA for low noise figure.
The LNA is bia | Components | 61 kB | 33 | Rficsolutions Inc. | RTLNA01 | The RTLNA01 is 2 to 4 GHz; Low Noise Amplifier IP | jai_kale |
