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Search results for: backfire 2.4 ghz (found: 100 regularSearch) ask for a document
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Back-fire.pdf20/10/05Antena wireless 2.4 Ghz208 kB1213Pacificbackfire 2.4 ghz
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GRFM1.pdf11/02/08The GRFM1 is 10 GHz to 20 GHz Frequency multiplier designed on 2 um InGaP HBT process. GRFM1 multiplies the input frequency from 10 GHz to 20 GHz by the factor of 2 so as to produce the output of 20 GHz to 40 GHz. Conversion gain of frequency multipl41 kB133Rficsolutions Inc.GRFM1
GEDA01.pdf11/02/08The GEDA01 is 7.0 GHz to 20.0 GHz low power single stage buffer amplifier. The amplifier is designed using 2 μm InGaP HBT Technology for high frequency applications. Driver amplifier shows gain of 4.5 dB at 20 GHz with power output of 9 dBm. It 48 kB517Rficsolutions Inc.The GEDA01 is 7.0 GHz to 20.0 GHz low power
GEDA02.pdf11/02/08The GEDA02 is 20 GHz to 40 GHz low power buffer amplifier. The amplifier is designed using 2 μm InGaP HBT process for high frequency applications. Driver amplifier shows gain of 1dB at 40 GHz with power output of 0dBm. It operates at 4.2Volts.44 kB276Rficsolutions Inc.The GEDA02 is 20 GHz to 40 GHz low power buffer
GHZ.pdf25/06/20 . Electronic Components Datasheets Passive components capacitors CDD G Gemcon 2006 Radial GHZ.pdf170 kB0RadialGHZ
RGLNA11(2-6 GHz GaAs pHEMT).pdf13/02/08The RGLNA11 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The device is designed for use in the 802.11a/b/g and WLAN MIMO system. The LNA covers a wide range of frequency from 2 to 6 GHz. The noise figure is 1.7 dB a126 kB55Rficsolutions.IncRGLNA11
GRDA1.pdf11/02/08The GRDA1 is 10 GHz to 20 GHz differential amplifier designed on 2 um InGaP HBT process. The gain of GRDA1 is 5 dB typically with flatness of ±3dB over the entire bandwidth. Typical current requirement for GRDA1 is 24 mA. The one dB compression point46 kB75Rficsolutions Inc.GRDA1
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf13/02/08The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i36 kB61Rficsolutions.IncRGLNA09
RGLNA10(7.0-26.0 GHz GaAs pHEMT).pdf13/02/08The RGLNA10 is 7.0-26.0 GHz; Low Noise Distributed Amplifiers using GaAs pHEMT Technology. The self-biased amplifier provides 19 dB of gain and 14 dBm of output power at P1 dB gain compression while requiring only 86 mA from a single 3.0 V supply. G44 kB198Rficsolutions.IncRGLNA10
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf13/02/08The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is77 kB64Rficsolutions.IncRGLNA08
RGLNA03.pdf13/12/07broadband Low noise amplifier 2 GHz to 12 GHz114 kB98
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf13/02/08The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no59 kB65Rficsolutions.IncRGLNA02
RJVC02.pdf11/02/08RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.72 kB50Rficsolutions Inc.RJVC02 is 2.0 - 6.0 GHz, voltage controlled
RJVC02.pdf11/02/08RJVC02 is 2.0 - 6.0 GHz, voltage controlled oscillator. It can operate at 1.8 V supply and consumes only 1.0 mA current. The tuning bandwidth of the oscillator is 4 GHz with good phase noise performance.72 kB55Rficsolutions Inc.RJVC02 is 2.0 - 6.0 GHz, voltage controlled
RGLNA06(2-6 GHz,3.3 V GaAs pHEMT).pdf13/02/08The RGLNA06 is a broadband high efficiency GaAs Enhancement mode pHEMT Low Noise Amplifier. The MMIC Low Noise Amplifier doesn’t require any off-chip component. The Broadband LNA is designed for the 802.11a/b/g/n system. The LNA covers a wide range o54 kB78Rficsolutions.IncRGLNA06
RJP05 _2.4GHz_WLAN_PA_.pdf12/02/08The RJP05 is 2.4 GHz to 2.5 GHz; high efficiency Power stage for WLAN Power Amplifier. The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems. Power amplifier shows PAE of 31% at 24 dBm power with output match off-chip206 kB485Rficsolutions Inc.RJP05
RGLNA03(2-12 GHz GaAs pHEMT).pdf13/02/08The RGLNA03 is 2.0 to 12.0 GHz high efficiency GaAs Enhancement mode p-HEMT Low noise amplifier .The device is designed for 802.11a/b/g standard. The minimum noise figure achieved is 1.5 dB at 2 GHz. A single 3.5V and 12 mA current bias the LNA. No input114 kB92Rficsolutions.IncRGLNA03
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf13/02/08The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi154 kB109Rficsolutions.IncRGPA03
RTDA01.pdf12/02/08The RTDA01 is a 2.0 to 5.0 GHz; CMOS driver amplifier. The device is designed for the 802.11 a/b/g WLAN systems. The driver amplifier gives 18 dBm Pout for the frequency range 2.0 to 5.0 GHz. The input and output matching is on chip which reduces the56 kB153Rficsolutions Inc.RTDA01
RDA03(2-4 GHz Driver Amp).pdf13/02/08The RDA03 is a 2.0 to 4.0 GHz, high gain Driver Amplifier. It provides very good gain flatness over the band. It requires +3.3 Volt supply. It has tunability by having some off chip components. It has the option to optimize externally with off chip i128 kB96Rficsolutions.IncRDA03

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