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SGSIF344
SGSIF444
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s SGSIF344 IS SGS-THOMSON PREFERRED
SALESTYPE
s HIGH VOLTAGE CAPABILITY
s VERY HIGH SWITCHING SPEED
s LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
s HORIZONTAL DEFLECTION FOR COLOUR 3 3
2 2
TVS AND MONITORS 1 1
DESCRIPTION
The SGSIF344 and SGSIF444 are manufactured ISOWATT220 ISOWATT218
using Multiepitaxial Mesa technology for
cost-effective high performance and uses a
Hollow Emitter structure to enhance switching
speeds.
These transistors are available in ISOWATT220
and ISOWATT218 plastic package respectively. INTERNAL SCHEMATIC DIAGRAM
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
SGSIF344 SGSIF 444
V CES Collector-Emitter Voltage (VBE = 0) 1200 V
V CEO Collector-Emitter Voltage (IB = 0) 600 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 7 A
I CM Collector Peak Current (tp < 5 ms) 12 A
IB Base Current 5 A
I BM Base Peak Current (tp < 5 ms) 8 A
o
P tot T otal Dissipation at Tc = 25 C 40 50 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
June 1997 1/7
SGSIF344 / SGSIF444
THERMAL DATA
o
ISOW AT T220 ISOW AT T218 C/W
o
R t hj-ca se Thermal Resistance Junction-case Max 3.12 2.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1200 V 200