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STP2NC70Z, STP2NC70ZFP
STD1NC70Z, STD1NC70Z-1
N-CHANNEL 700V - 7.3 - 1.4A TO-220/FP/DPAK/IPAK
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID Pw
STP2NC70Z 700 V < 8.5 1.4 A 50 W
STP2NC70ZFP 700 V < 8.5 1.4 A 25 W
STD1NC70Z 700 V < 8.5 1.4 A 45 W
STD1NC70Z-1 700 V < 8.5 1.4 A 45 W 2
3
1
s TYPICAL RDS(on) = 7.3 TO-220 TO-220FP
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES 3
3
2 1
1
IPAK DPAK
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications..
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP2NC70Z P2NC70Z TO-220 TUBE
STP2NC70ZFP P2NC70ZFP TO-220FP TUBE
STD1NC70ZT4 D1NC70Z DPAK TAPE & REEL
STD1NC70Z-1 D1NC70Z IPAK TUBE
February 2002 1/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STD1NC70Z
STP2NC70Z STP2NC70ZFP
STD1NC70Z-1
VDS Drain-source Voltage (VGS = 0) 700 V
VDGR Drain-gate Voltage (RGS = 20 k) 700 V
VGS Gate- source Voltage