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BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively. 1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BD235 BD237
PNP BD236 BD238
V CBO Collector-Base Voltage (IE = 0) 60 100 V
V CER Collector-Base Voltage (R BE = 1K) 60 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 2 A
I CM Collector Peak Current 6 A
o
P t ot Total Dissipation at T c = 25 C 25 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.
September 1997 1/5
BD235/BD236/BD237/BD238
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CE = rated V CEO 0.1 mA
o
Current (IE = 0) V CE = rated V CEO Tc = 150 C 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 100 mA
Sustaining Voltage for BD235/BD236 60 V
for BD237/BD238 80 V
V CE(sat ) Collector-Emitter IC = 1 A IB = 0.1 A 0.6 V
Saturation Voltage
V BE Base-Emitter Voltage IC = 1 A V CE = 2 V 1.3 V
h FE DC Current G ain I C = 150 mA VCE = 2 V 40
IC = 1 A V CE = 2 V 25
fT Transition frequency I C = 250 mA VCE = 10 V 3 MHz
hFE1 /h FE 2 Matched Pairs I C = 150 mA VCE = 2 V 1.6
Pulsed: Pulse duration = 300