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2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII)

2SK2605
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance : RDS (ON) = 1.9 (typ.)
High forward transfer admittance : |Yfs| = 3.8 S (typ.)
Low leakage current : IDSS = 100