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STP35NF10
STB35NF10
N-CHANNEL 100V - 0.030 - 40A TO-220 / D2PAK
LOW GATE CHARGE STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STP35NF10 100 V < 0.035 40 A
STB35NF10 100 V < 0.035 40 A
s TYPICAL RDS(on) = 0.030
s EXCEPTIONAL dv/dt CAPABILITY 3
100% AVALANCHE TESTED 1
s 3
2
s APPLICATION ORIENTED 1
CHARACTERIZATION
TO-220 D2PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage