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BFY50/51
MEDIUM POWER AMPLIFIER
DESCRIPTION
The BFY50 and BFY52 are silicon planar
epitaxial NPN transistors in Jedec TO-39 metal
case. They are intended for general purpose
linear and switching applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BFY50 BFY51
V CBO Collector-Base Voltage (IE = 0) 80 60 V
V CEO Collector-Emitter Voltage (I B = 0) 35 30 V
V EBO Emitter-Base Voltage (I C = 0) 6 V
IC Collector Current 1 A
I CM Collector Peak Current (tp < 5 ms) 1.5 A
o
P t ot Total Dissipation at T amb 25 C 0.8 W
at T case 25 o C 5 W
o
T stg St orage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
November 1997 1/5
BFY50/BFY51
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 35 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 218 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off for BFY50
Current (IE = 0) V CB = 60 V 50 nA
o
V CB = 60 V T ca s e = 100 C 2.5