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STBV32
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
Compact fluorescent lamps (CFLS)
SMPS for battery charger TO-92 TO-92AP
Description
Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV32G and STBV32G-AP are supplied
using halogen-free molding compound.
Table 1. Device summary
Order codes Marking Package Packaging
STBV32 BV32 TO-92 Bulk
STBV32G BV32G TO-92 Bulk
STBV32-AP BV32 TO-92AP Ammopack
STBV32G-AP BV32G TO-92AP Ammopack
July 2008 Rev 8 1/11
www.st.com 11
Electrical ratings STBV32
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms) V(BR)EBO V
Collector current
IC 1.5 A
(f 100 Hz, duty-cycle 50%, TC = 25