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SEMICONDUCTOR KTD718B
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR


HIGH POWER AMPLIFIER APPLICATION.
A
N Q B
FEATURES O K

Recommended for 45 50W Audio Frequency Amplifier Output Stage.




F
DIM MILLIMETERS
Complementary to KTB688B. A _
15.60 + 0.20
B _
4.80 + 0.20




C
J
R
I
C _
19.90 + 0.20




H
D _
2.00 + 0.20
d _
1.00 + 0.20
E _
3.00 + 0.20




G
F _
3.80 + 0.20
D G _
3.50 + 0.20
E H _
13.90 + 0.20
MAXIMUM RATING (Ta=25 ) I _




L
12.76 + 0.20
d M _
J 23.40 + 0.20
CHARACTERISTIC SYMBOL RATING UNIT K 1.5+0.15-0.05
L _
16.50 + 0.30
Collector-Base Voltage VCBO 120 V P P T M _
1.40 + 0.20
N _
13.60 + 0.20
Collector-Emitter Voltage VCEO 120 V O _
9.60 + 0.20
P _
5.45 + 0.30
VEBO 1 2 3
Emitter-Base Voltage 5 V Q _
3.20 + 0.10
R _
18.70 + 0.20
Collector Current IC 10 A 1. BASE
T 0.60+0.15-0.05


Base Current IB 1 A 2. COLLECTOR (HEAT SINK)
3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 80 W
Junction Temperature Tj 150 TO-3P(N)-E
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 120 - - V
DC Current Gain hFE (Note) VCE=5V, IC=1A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=0.6A - - 2.0 V
Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A - 12 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 170 - pF

Note : hFE Classification R:55 110, O:80 160




2005. 3. 14 Revision No : 1 1/2
KTD718B


I C - VCE h FE - IC
12 1k
COMMON EMITTER
COLLECTOR CURRENT I C (A)




COMMON EMITTER
400 300 500 VCE =5V
10 Tc=25 C




DC CURRENT GAIN h FE
300
200
8
Tc=100 C
Tc=25 C
6 100 100
Tc=-25 C

4 50 50
30
I B =20mA
2
0
0 10
0 2 4 6 8 10 12 14 0.01 0.03 0.1 0.3 1 3 10

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)




VCE(sat) - I C SAFE OPERATING AREA
COLLECTOR-EMITTER SATURATION




1 30
COMMON EMITTER
0.5 I C /I B =10 I C MAX(PULSED) * t=1mS *
VOLTAGE V CE(sat) (V)




COLLECTOR CURRENT I C (A)




I C MAX(CONTINUOUS) 10mS *
0.3 10
DC 100mS *
5
O 00
Tc PER mS
=2 A
0.1 00 C 3 5 TI
Tc=1 C ON *

0.05 Tc=25 C
Tc=-25 C
0.03 1

* SINGLE NONREPETITIVE




VCEO MAX.
PULSE Tc=25 C
0.01 0.3
CURVES MUST BE DERATED
0.01 0.03 0.1 0.3 1 3 10 LINEARLY WIHT INCREASE
IN TEMPERATURE.
COLLECTOR CURRENT I C (A) 0.1
1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V)




Pc - Ta
COLLECTOR POWER DISSIPATION




100
1 Ta=Tc
INFINITE HEAT SINK
1
80 2 300x300x2mm Al
HEAT SINK
3 200x200x2mm Al
60 HEAT SINK
P C (W)




4 100x100x2mm Al
2 HEAT SINK
40 3 5 NO HEAT SINK

4
20

5
0
0 40 80 120 160 200 240

AMBIENT TEMPERATURE Ta ( C)



2005. 3. 14 Revision No : 1 2/2