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Advance Technical Information

GigaMOSTM IXFK260N17T VDSS = 170V
Power MOSFET IXFX260N17T ID25 = 260A
RDS(on) 6.5m
N-Channel Enhancement Mode
trr 200ns
Avalanche Rated
Fast Intrinsic Diode TO-264 (IXFK)




Symbol Test Conditions Maximum Ratings
G
VDSS TJ = 25