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CEH2305
P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
-30V, -4.9A , RDS(ON) = 52m @VGS = -10V.
RDS(ON) = 65m @VGS = -4.5V.
RDS(ON) = 119m @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
D(1,2,5,6,)
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6 G(3)
3
2
1
TSOP-6 S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS