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MJD122
MJD127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s LOW BASE-DRIVE REQUIREMENTS
s INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s ELECTRICAL SIMILAR TO TIP122 AND 3
TIP127
1
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER. DPAK
TO-252
DESCRIPTION (Suffix "T4")
The MJD122 and MJD127 form complementary
NPN - PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance. INTERNAL SCHEMATIC DIAGRAM

R1 Typ. = 10 K R 2 Typ. = 150

ABSOLUTE MAXIMUM RATINGS
Symbo l Parameter Valu e Un it
NPN MJD122
PNP MJD127
V CBO Collector-Base Voltage (I E = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 5 A
I CM Collector Peak Current 8 A
IB Base Current 100 mA
P to t Total Dissipation at T case 25 o C 20 W
o
T stg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

June 1997 1/6
MJD122 MJD127

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 6.25 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 100 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 100 V 10