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SEMICONDUCTOR KTD2424
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE DARLINGTON TRANSISTOR.
A C
FEATURES
DIM MILLIMETERS
F
High DC Current Gain : hFE=3000(Min.) (VCE=2V, IC=1A) S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Complementary to KTB1424. E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
MAXIMUM RATING (Ta=25 ) L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Base Voltage VCBO 80 V
P _
6.8 + 0.1
Q _
4.5 + 0.2
Collector-Emitter Voltage VCEO 60 V _
R 2.6 + 0.2
N N H S 0.5 Typ
Emitter-Base Voltage VEBO 10 V
Collector Current IC 3 A
IB 1. BASE
Base Current 0.5 A
Q
1 2 3
2. COLLECTOR
Collector Power Dissipation (Tc=25 ) PC 25 W 3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 20 A
Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 60 - - V
hFE(1) VCE=2V, IC=1A 3000 - -
DC Current Gain
hFE(2) VCE=2V, IC=3A 1000 - -
Collector-Emitter VCE(sat) IC=3A, IB=30mA - - 1.5
Saturation Voltage V
Base-Emitter VBE(sat) IC=3A, IB=30mA - - 2.0
2007. 5. 22 Revision No : 1 1/1