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SEMICONDUCTOR KTD1415
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
A C
APPLICATIONS.
DIM MILLIMETERS
F
S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
FEATURES E
C _
2.70 + 0.3
B
High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
MAXIMUM RATING (Ta=25 ) D D N _
2.54 + 0.1
P _
6.8 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT Q _
4.5 + 0.2
R _
2.6 + 0.2
Collector-Base Voltage VCBO 100 V N N H S 0.5 Typ
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V 1. BASE
Q
1 2 3
Collector Current IC 7 A 2. COLLECTOR
3. EMITTER
Base Current IB 0.2 A
Collector Power Dissipation (Tc=25 ) PC 30 W
TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
COLLECTOR
BASE
~ ~
= 5K = 150
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 3.0 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
hFE(1) VCE=3V, IC=3A 2000 - 15000
DC Current Gain
hFE(2) VCE=3V, IC=7A 1000 - -
VCE(sat)(1) IC=3A, IB=6mA - 0.9 1.5
Collector-Emitter Saturation Voltage V
VCE(sat)(2) IC=7A, IB=14mA - 1.2 2.0
Base-Emitter Saturation Voltage VBE(sat) IC=3A, IB=6mA - 1.5 2.5 V
Turn-on Time ton 20