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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW60C
VHF power transistor
Product specification March 1993
Philips Semiconductors Product specification
VHF power transistor BLW60C
DESCRIPTION Matched hFE groups are available on
request.
N-P-N silicon planar epitaxial
transistor intended for use in class-A, It has a 3/8" capstan envelope with a
B and C operated mobile, industrial ceramic cap. All leads are isolated
and military transmitters with a from the stud.
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to Th = 25