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SEMICONDUCTOR KTA2014V
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES B
Excellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
2 DIM MILLIMETERS
Low Noise : NF=1dB(Typ.), 10dB(Max.). A _
1.2 +0.05
D
G
A
B _
0.8 +0.05
Complementary to KTC4075V.
H
1 3 _
C 0.5 + 0.05
K
_
Very Small Package. D 0.3 + 0.05
E _
1.2 + 0.05
G _
0.8 + 0.05
P P H 0.40
J _
0.12 + 0.05
K _
0.2 + 0.05
P 5
MAXIMUM RATING (Ta=25 )
C
J
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V 1. EMITTER
2. BASE
Collector-Emitter Voltage VCEO -50 V 3. COLLECTOR
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150 mA
IB
VSM
Base Current -30 mA
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
Type Name
S h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-6V, IC=-2mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1mA 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF
VCE=-6V, IC=-0.1mA
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400
2001. 7. 20 Revision No : 0 1/3
KTA2014V
2001. 7. 20 Revision No : 0 2/3
KTA2014V
Pc - Ta
COLLECTOR POWER DISSIPATION PC (mW)
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2001. 7. 20 Revision No : 0 3/3