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BCV64B
PNP general-purpose double transistor
Rev. 4 -- 2 August 2010 Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number Package PNP complement
NXP JEITA
BCV64B SOT143B - BCV63B
1.2 Features and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V and 6 V)
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
For use in Schmitt trigger applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
IC collector current - - -100 mA
Transistor TR1
VCEO collector-emitter voltage open base - - -30 V
hFE DC current gain VCE = -5 mV; 220 - 475
IC = -2 mA
Transistor TR2
VCEO collector-emitter voltage open base - - -6 V
hFE DC current gain VCE = -700 V; [1] 220 - 475
IC = -2 mA
[1] Due to matched dies, hFE values for TR2 are the same as for TR1.
NXP Semiconductors BCV64B
PNP general-purpose double transistor
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 collector TR2 and base TR1
4 3 2 1
2 collector TR1
3 emitter TR1 and TR2
TR1
4 base TR2
TR2
1 2
3 4
006aab230
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
BCV64B - plastic surface-mounted package; 4 leads SOT143B
4. Marking
Table 5. Marking codes
Type number Marking code[1]
BCV64B *C6
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BCV64B All information provided in this document is subject to legal disclaimers.