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TIP33C
TIP34C

Complementary power transistors

Features
.

Low collector-emitter saturation voltage
Complementary NPN - PNP transistors

Applications
General purpose
3
2
1
Description
TO-247
The devices are manufactured in epitaxial-base
planar technology and are suitable for power
linear and switching applications. Figure 1. Internal schematic diagrams

Table 1. Device summary
Order code Marking Package Packaging

TIP33C TIP33C
TO-247 Tube
TIP34C TIP34C

February 2008 Rev 3 1/7
www.st.com 7
Electrical ratings TIP34C

1 Electrical ratings

Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

NPN TIP33C

PNP TIP34C

VCBO Collector-base voltage (IE = 0) 140 V
VCES Collector-emitter voltage (VBE = 0) 140 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 10 A
ICM Collector peak current (tP < 5 ms) 15 A
IB Base current 3 A
PTOT Total dissipation at Tcase = 25