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CEM3258
Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES
5
30V, 7A, RDS(ON) = 28m @VGS = 10V.
RDS(ON) = 40m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired. D1 D1 D2 D2
8 7 6 5
Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS