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SEMICONDUCTOR KTC5706D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.

A I
FEATURES
C J
Adoption of FBET, MBIT Processes.
DIM MILLIMETERS




D
High Current Capacitance. A _
6.60 + 0.2
B _
6.10 + 0.2
Low Collector-to-Emitter Saturation Voltage. C _
5.0 + 0.2
_




B
D 1.10 + 0.2
High-Speed Switching. _
E 2.70 + 0.2
_
Ultra small Package Facilitates Miniaturization in end Products. F 2.30 + 0.1




M
Q
H 1.00 MAX




K
High Allowable Power Dissipation.




E
I _
2.30 + 0.2




O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX

MAXIMUM RATING (Ta=25 ) 1. BASE
2. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
3. EMITTER

Collector-Base Voltage VCBO 80 V
VCES 80
Collector-Emitter Voltage V
VCEO 50 DPAK
Emitter-Base Voltage VEBO 6 V
DC IC 5
Collector Current A
Pulse ICP 7.5
A I
Base Current IB 1.2 A C J

1.0
D
Collector Power Ta=25
PC W
Dissipation Tc=25 15
B




DIM MILLIMETERS
A _
6.60 + 0.2
Junction Temperature Tj 150 B _
6.10 + 0.2
Q




_
K




C 5.0 + 0.2
Storage Temperature Range Tstg -55 150 D _
1.10 + 0.2
H P
E _
9.50 + 0.6
E




G F _
2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX



1. BASE
2. COLLECTOR
3. EMITTER




IPAK




2006. 6. 22 Revision No : 1 1/4
KTC5706D/L

ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 80 - - V
V(BR)CES IC=100 A, VBE=0 80 - - V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
VCE(sat)1 IC=1A, IB=50mA - 90 135 mV
Collector-Emitter Saturation Voltage
VCE(sat)2 IC=2A, IB=100mA - 160 240 mV
Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100mA - 0.88 1.2 V
DC Current Gain hFE VCE=2V, IC=500mA 200 - 560
Transition Frequency fT VCE=10V, IC=500mA - 400 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 13 - pF


Turn-On Time ton - 35 -


Switching tstg
Storage Time - 300 - nS
Time


Fall Time tf - 20 -




2006. 6. 22 Revision No : 1 2/4
KTC5706D/L




2006. 6. 22 Revision No : 1 3/4
KTC5706D/L




2006. 6. 22 Revision No : 1 4/4