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PolarHVTM HiPerFET IXFR 24N80P VDSS = 800 V
Power MOSFET ID25 = 13 A
RDS(on) 420 m
(Electrically Isolated Back Surface)
trr 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode

Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR)
E153432
VDSS TJ = 25