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2SD1664

TRANSISTOR (NPN)
SOT-89
FEATURES
Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
1. BASE
Complements to 2SB1132

2. COLLECTOR 1
MAXIMUM RATINGS (TA=25 unless otherwise noted)
2
Symbol Parameter Value Units
3. EMITTER 3
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 32 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector power dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V

Emitter-base breakdown voltage V(BR)EBO IE=50A, IC =0 5 V

Collector cut-off current ICBO VCB=20V, IE=0 0.5 A

Emitter cut-off current IEBO VEB=4V, IC=0 0.5 A

DC current gain hFE VCE=3V, IC=100mA 82 390

Collector-emitter saturation voltage VCE(sat) IC=0.5A, IB=50mA 0.4 V

Transition frequency fT VCE=5V, IC=50mA, f=100MHz 150 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 15 pF

CLASSIFICATION OF hFE
Rank P Q R

Range 82-180 120-270 180-390

Marking DAP DAQ DAR

1

JinYu www.htsemi.com
semiconductor
2SD1664

2

JinYu www.htsemi.com
semiconductor
2SD1664

3

JinYu www.htsemi.com
semiconductor