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SEMICONDUCTOR KTC4080
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
FEATURES M B M
Small Reverse Transfer Capacitance DIM MILLIMETERS
A _
2.00 + 0.20
D
: Cre=0.7pF(Typ.) 2 B _
1.25 + 0.15
_
A
0.90 + 0.10
J
C
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). 1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
MAXIMUM RATING (Ta=25 ) L 0.70
C
H _
L
M 0.42 + 0.10
CHARACTERISTIC SYMBOL RATING UNIT N 0.10 MIN
N N
K
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO 4 V
3. COLLECTOR
Collector Current IC 20 mA
Emitter Current IE -20 mA
Collector Power Dissipation PC 100 mW USM
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
h FE Rank Lot No.
Type Name
Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=18V, IE=0 - - 0.5 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.5 A
DC Current Gain hFE (Note) VCE=6V, IC=1mA 40 - 200
Reverse Transfer Capacitance Cre VCB=6V, f=1MHz - 0.7 - pF
Transition Frequency fT VCE=6V, IC=1mA 300 550 - MHz
Collector-Base Time Constant CC rbb' VCB=6V, IE=-1mA, f=30MHz - - 30 pS
Noise Figure NF - 2.5 5.0
VCC=6V, IE=-1mA, f=100MHz (Fig.) dB
Power Gain Gpe 15 18 -
Note : hFE Classification R(1):40 80, O(2):70 140, Y(4):100 200
2008. 8. 29 Revision No : 4 1/6
KTC4080
Fig. Gpe TEST CIRCUIT
6pF
OUTPUT
R L=50
0.01