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SEMICONDUCTOR MPSA77
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
DARLINGTON TRANSISTOR
B C
FEATURES
Complementary to MPSA27.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
MAXIMUM RATINGS (Ta=25 ) E 1.00
F 1.27
CHARACTERISTIC SYMBOL RATING UNIT G 0.85
H 0.45
_
Collector-Base Voltage VCBO -60 V H J 14.00 + 0.50
F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCES -60 V M 0.45 MAX
N 1.00
Emitter-Base Voltage VEBO -10 V
C
1 2 3
L
M
Collector Current IC -500 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC 625 mW 3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCE=-50V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-10V, IB=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CES IC=-100 A, IB=0 -60 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -60 - - V
hFE(1) * VCE=-5V, IC=-10mA 10K - -
DC Current Gain
hFE(2) * VCE=-5V, IC=-100mA 10K - -
Collector-Emitter Saturation Voltage VCE(sat) * IC=-100mA, IB=-0.1mA - - -1.5 V
Base-Emitter Voltage VBE * VCE=-5V, IC=-100mA - - -2 V
* Pulse Test : PW 300 S, Duty Cycle 2%.
2002. 2. 20 Revision No : 1 1/2
MPSA77
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
hFE - IC VBE(sat), VCE(sat) - IC
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
1000k -10
VCE =-5V IC /I B =1000
DC CURRENT GAIN hFE
300K -5
-3
100K
VBE(sat)
30K -1 VCE(sat)
10K -0.5
-0.3
3K
1K -0.1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300-500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
IC - VBE SAFE OPERATING AREA
200 -2K
COLLECTOR CURRENT IC (mA)
VCE =-5V
100 I C MAX(PULSED) *
COLLECTOR CURRENT IC (mA)
-1K
100