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CEP75A3/CEB75A3
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

25V, 69A, RDS(ON) = 9m @VGS = 10V.
RDS(ON) = 13m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D
Lead free product is acquired.

TO-263 & TO-220 package.

G

CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220
S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS