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SEMICONDUCTOR BC307/8/9
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
B C
FEATURES
High Voltage : BC307 VCEO=-45V.
A
Low Noise : BC309 NF=0.2dB(Typ.), 3dB(Max.)
(VCE=-6V, IC=-0.1mA, f=1kHz). N DIM MILLIMETERS
E A 4.70 MAX
K
For Complementary With NPN type BC237/238/239. G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
BC307 -50 N 1.00
C
1 2 3
L
M
Collector-Base Voltage BC308 VCBO -30 V 1. COLLECTOR
2. BASE
BC309 -30
3. EMITTER
BC307 -45
Collector-Emitter Voltage BC308 VCEO -25 V
TO-92
BC309 -20
BC307 -5
Emitter-Base Voltage BC308 VEBO -5 V
BC309 -5
BC307 -100
Collector Current BC308 IC -100 mA
BC309 -50
BC307 100
Emitter Current BC308 IE 100 mA
BC309 50
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1994. 3. 2 Revision No : 0 1/2
BC307/8/9
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -15 nA
BC307 120 - 460
DC Current Gain
BC308 hFE VCE=-5V, IC=-2mA 120 - 800
(Note)
BC309 180 - 800
BC307 - - -0.6
Collector-Emitter IC=-100mA, IB=-5mA
BC308 VCE(sat) - - -0.6 V
Saturation Voltage
BC309 IC=-10mA, IB=-0.5mA - - -0.2
BC307 - - -1.0
Base-Emitter IC=-100mA, IC=-5mA
BC308 VBE(sat) - - -1.0 V
Saturation Voltage
BC309 IC=-10mA, IB=-0.5mA - - -0.8
Base-Emitter Voltage VBE(ON) VCE=-5V, IC=-2mA -0.55 - -0.7 V
Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 200 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - - 6.0 pF
BC307 - 1.0 10
VCE=-6V, IC=-0.1mA
Noise Figure BC308 NF - 1.0 10 dB
Rg=10k , f=1kHz
BC309 - 0.2 3.0
NOTE : According to the Value of hFE the BC307, BC308, BC309 are classified as follows.
CLASSIFICATION A B C
BC307 120 220 180 460 -
hFE BC308 120 220 180 460 380 800
BC309 - 180 460 380 800
1994. 3. 2 Revision No : 0 2/2