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PMST3906
40 V, 200 mA PNP switching transistor
Rev. 05 -- 29 April 2009 Product data sheet
1. Product profile
1.1 General description
PNP switching transistor in a SOT323 (SC-70) very small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMST3904.
1.2 Features
I Collector current: IC -200 mA
I Collector-emitter voltage: VCEO -40 V
I Very small SMD plastic package
1.3 Applications
I General amplification and switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -40 V
IC collector current - - -200 mA
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
1 2 2
sym013
NXP Semiconductors PMST3906
40 V, 200 mA PNP switching transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMST3906 SC-70 plastic surface-mounted package; 3 leads SOT323
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PMST3906 *2A
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -40 V
VCEO collector-emitter voltage open base - -40 V
VEBO emitter-base voltage open collector - -6 V
IC collector current - -200 mA
ICM peak collector current single pulse; - -200 mA
tp 1 ms
IBM peak base current single pulse; - -100 mA
tp 1 ms
Ptot total power dissipation Tamb 25