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SEMICONDUCTOR KHB9D5N20P/F/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR

General Description KHB9D5N20P
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and B
A _
9.9 + 0.2
B 15.95 MAX
switch mode power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
M G 3.7
L
H 0.5+0.1/-0.05
FEATURES J I 1.5
D J _
13.08 + 0.3