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SEMICONDUCTOR KMB012N40DA
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
A K DIM MILLIMETERS
characteristics. It is mainly suitable for Back-light Inverter and Power C D L
A _
6.60 + 0.20
_
Supply. B 6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
G 0.96 MAX
FEATURES H 0.90 MAX
H
J J _
1.80 + 0.20
VDSS=40V, ID=12A. E
G N K _
2.30 + 0.10
Low Drain-Source ON Resistance. L _
0.50 + 0.10
F F M M _
0.50 + 0.10
: RDS(ON)=33m (Max.) @ VGS=10V N 0.70 MIN
O 0.1 MAX
: RDS(ON)=47m (Max.) @ VGS=4.5V
Super High Dense Cell Design. 1 2 3 1. GATE
2. DRAIN
High Power and Current Handling Capability. 3. SOURCE
O
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
DPAK (1)
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS 20 V
DC@TC=25 (Note1) ID 12 Marking
Drain Current A
Pulsed (Note2) IDP 30 Type Name
Drain-Source Diode Forward Current IS 30 A
@TC=25 (Note1) 45
Drain Power Dissipation PD W KMB
@Ta=25 (Note2) 3.1 012N40
DA Lot No
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Case (Note1) RthJC 2.8 /W
Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
PIN CONNECTION (TOP VIEW)
D 2
2
1 3
1 3
G S
2008. 9. 26 Revision No : 0 1/5
KMB012N40DA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 40 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 - 3 V
VGS=10V, ID=12A - 25 33
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=6A - 34 47
Forward Transconductance gfs* VDS=5V, ID=12A - 3 - S
Dynamic
Input Capacitance Ciss - 432 -
Ouput Capacitance Coss VDS=20V, f=1MHz, VGS=0V - 130 - pF
Reverse Transfer Capacitance Crss - 50 -
VGS=10V Qg* - 10.2 -
Total Gate Charge
VGS=4.5V Qg* - 5.5 -
VDS=24V, VGS=10V, ID=12A nC
Gate-Source Charge Qgs* - 2.2 -
Gate-Drain Charge Qgd* - 2.4 -
Turn-On Delay Time td(on)* - 5 -
Turn-On Rise Time tr* VDD=20V, VGS=10V - 6 -
ns
Turn-Off Delay Time td(off)* ID=12A, RG=3 - 15 -
Turn-Off Fall Time tf* - 5 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IS=1A - 0.8 1.0 V
Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%
2008. 9. 26 Revision No : 0 2/5
KMB012N40DA
Fig1. ID - VDS Fig2. RDS(ON)-ID
Drain Source On Resistance RDS(ON) (m)
30 75
VGS=10V 6.0V 5.0V
Ta=25 C
4.5V
24 60
Drain Current ID (A)
18 45
4.0V VGS=4.5V
12 30
VGS=10V
6 3.5V 15
0 0
0 0.5 1 1.5 2 2.5 0 6 12 18 24 30
Drain - Source Voltage VDS (V) Drain - Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
Drain-Source On-Resistance RDS(ON) (m)
30 75
VDS=VGS VGS=10V, ID=12A
24 60
Drain Current ID (A)
18 45
12 30
25 C
6 15
Ta=125 C -55 C
0 0
1 1.5 2 2.5 3 3.5 4 4.5 -75 -50 -25 0 25 50 75 100 125 150
Gate Source Volatage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IS - VSDF
5 100
Gate Threshold Voltage Vth (V)
VGS=VDS
Reverse Drain Current IS (A)
ID=250