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Advance Technical Information
HiPerFASTTM IGBT IXGR 32N90B2D1 VCES = 900 V
IC25 = 47 A
with Fast Diode
VCE(sat) = 2.9 V
tfi typ = 150 ns
Electrically Isolated Base
Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)
E153432
VCES TJ = 25OC to 150OC 900 V
VCGR TJ = 25OC to 150OC; RGE = 1 M 900 V
VGES Continuous