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SEMICONDUCTOR KTB2530
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH POWER AMPLIFIER
DARLINGTON APPLICATION.
A
N Q B
O K
FEATURES
DIM MILLIMETERS
Complementary to KTD1530 _
F
A 15.60 + 0.20
B _
4.80 + 0.20
Recommended for 80W Audio Amplifier Output Stage. C _
19.90 + 0.20
C
J
R
_
I
D 2.00 + 0.20
H
d _
1.00 + 0.20
E _
3.00 + 0.20
F _
3.80 + 0.20
G
G _
3.50 + 0.20
D H _
13.90 + 0.20
MAXIMUM RATING (Ta=25 ) E I _
12.76 + 0.20
J _
23.40 + 0.20
L
CHARACTERISTIC SYMBOL RATING UNIT d M K 1.5+0.15-0.05
L _
16.50 + 0.30
Collector-Base Voltage VCBO -160 V M _
1.40 + 0.20
P P N _
13.60 + 0.20
T
Collector-Emitter Voltage VCEO -150 V O _
9.60 + 0.20
P _
5.45 + 0.30
Emitter-Base Voltage VEBO -5 V Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
Collector Current IC -10 A T 0.60+0.15-0.05
Base Current IB -1 A
Collector Power Dissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150 TO-3P(N)-E
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
EMITTER
70
BASE
COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-30mA, IB=0 -150 - - V
DC Current Gain hFE VCE=-4V, IC=-7A 15,000 - 30,000
Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V
Transition Frequency fT VCE=-12V, IC=-2A - 50 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 230 - pF
2012. 8. 21 Revision No : 0 1/3
KTB2530
2012. 8. 21 Revision No : 0 2/3
KTB2530
2012. 8. 21 Revision No :0 3/3