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MLD1N06CL
Preferred Device

SMARTDISCRETESt MOSFET
1 Amp, 62 Volts, Logic Level
N-Channel DPAK
The MLD1N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications http://onsemi.com
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in-rush current or a shorted load V(BR)DSS RDS(on) TYP ID MAX
condition could occur.
62 V (Clamped) 750 mW 1.0 A
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated Gate-Source clamping for ESD
protection and integral Gate-Drain clamping for over-voltage N-Channel
protection and Sensefet technology for low on-resistance. No D
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
The internal Gate-Source and Gate-Drain clamps allow the device
R1
to be applied without use of external transient suppression G
components. The Gate-Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is R2
essentially independent of operating temperature.
Features S