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2STL1360
2STX1360

Low voltage fast-switching NPN power transistors

Features
Very low collector-emitter saturation voltage
High current gain characteristic
Fast-switching speed

Applications
Emergency lighting
LED
TO-92 TO-92L
Voltage regulation
Relay drive

Figure 1. Internal schematic diagram
Description
The devices are NPN transistors manufactured
using new "PB-HCD" (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.

Table 1. Device summary
Order codes Marking Packages Packaging

2STL1360 L1360 TO-92L Bag
2STX1360 X1360 TO-92 Bag

October 2009 Doc ID 11763 Rev 3 1/10
www.st.com 10
Electrical ratings 2STL1360, 2STX1360

1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
2STX1360 2STL1360

VCBO Collector-base voltage (IE = 0) 80 V
VCEO Collector-emitter voltage (IB = 0) 60 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 3 A
ICM Collector peak current (tP < 5 ms) 5 A
IB Base current 0.2 A
IBM Base peak current (tP < 5 ms) 0.4 A
PTOT Total dissipation at Tamb = 25