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SD8250
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION

. EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY @ 1.75 dB RF

.
.
OVERDRIVE
LOW THERMAL RESISTANCE

.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY .400 x .400 2LFL (S036)

. METAL/CERAMIC HERMETIC PACKAGE
P OUT = 250 W MIN. WITH 8.0 dB GAIN ORDER CODE
SD8250
hermetically sealed
BRANDING
STAN250A




DESCRIPTION PIN CONNECTION
The SD8250 is a high power Class C transistor
specifically designed for TACAN/DME pulsed out-
put and driver applications.
This device is designed for operation under mod-
erate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF overdrive.
Low RF thermal resistance and computerized au-
tomatic wire bonding techniques ensure high re-
liability and product consistency.
The SD8250 is supplied in the AMPACTM Hermetic 1. Collector 3. Emitter
Metal/Ceramic package with internal Input/Output 2. Base 4. Base
matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25